Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
部品番号
コンポーネント説明
FZT1151A(1997) データシートの表示(PDF) - Diodes Incorporated.
部品番号
コンポーネント説明
メーカー
FZT1151A
(Rev.:1997)
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Diodes Incorporated.
FZT1151A Datasheet PDF : 4 Pages
1
2
3
4
FZT1151A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN.
VALUE
TYP. MAX.
UNIT
CONDITIONS.
Collector-Base
V
(BR)CBO
-45
-95
Breakdown Voltage
V
I
C
=-100
µ
A
Collector-Emitter
Breakdown Voltage
V
CES
-40
-90
V
I
C
=-100
µ
A
Collector-Emitter
V
CEO
-40
-85
Breakdown Voltage
V
I
C
=-10mA *
Collector-Emitter
Breakdown Voltage
V
CEV
-40
-90
V
I
C
=-100
µ
A, V
EB
=+1V
Emitter-Base
V
(BR)EBO
-5
-8.5
Breakdown Voltage
V
I
E
=-100
µ
A
Collector Cut-Off
Current
I
CBO
-0.3 -100 nA
V
CB
=-36V
Emitter Cut-Off Current I
EBO
Collector Emitter
I
CES
Cut-Off Current
-0.3 -100 nA
-0.3 -100 nA
V
EB
=-4V
V
CE
=-32V
Collector-Emitter
Saturation Voltage
V
CE(sat)
Base-Emitter
Saturation Voltage
V
BE(sat)
-60
-120
-140
-170
-200
-985
-90
mV
-180 mV
-220 mV
-260 mV
-300 mV
-1100 mV
I
C
=-0.1A, I
B
=-1.0mA*
I
C
=-0.5A, I
B
=-5mA*
I
C
=-1A, I
B
=-20mA*
I
C
=-1.8A, I
B
=-70mA*
I
C
=-3A, I
B
=-250mA*
I
C
=-3A, I
B
=-250mA*
Base-Emitter Turn-On V
BE(on)
Voltage
-850 -1000 mV
I
C
=-3A, V
CE
=-2V*
Static Forward Current h
FE
Transfer Ratio
Transition Frequency f
T
270 450
250 400 800
180 300
100 190
45
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.5A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-3A, V
CE
=-2V*
I
C
=-5A, V
CE
=-2V*
145
MHz I
C
=-50mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
cb
40
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
170
ns
I
C
=-2A, I
B
=-20mA,
V
CC
=-30V
t
off
460
ns
I
C
=-2A, I
B
=
±
20mA,
V
CC
=-30V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%.
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]