Nexperia
PHP225
Dual P-channel intermediate level FET
2.5
Ptot
(W)
2.0
1.5
1.0
0.5
0
0
mlb836
50
100
150
200
Ts (°C)
Fig 1. Power derating curve
−102
ID
(A)
−10
(1)
−1
P
−10−1
tp
δ=
T
−10−−210−1
tp
T
t
−1
Fig 2.
δ = 0.01
Ts = 80 °C.
(1) RDSon limitation.
SOAR; P-channel
mbe155
tp =
10 μs
1 ms
DC
0.1 s
−10 VDS (V) −102
5. Thermal characteristics
Table 5.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to
solder point
Conditions
see Figure 3
Min Typ Max Unit
-
-
35 K/W
102
mbe153
Rth j-s
(K/W)
10
1
δ=
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
P
tp
δ=
T
10−1
10−6
0
10−5
10−4
10−3
10−2
tp
t
T
10−1
1
tp (s)
Fig 3. Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
PHP225
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 17 March 2011
© Nexperia B.V. 2017. All rights reserved
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