MGP7N60E データシートの表示（PDF） - ON Semiconductor
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MGP7N60E Datasheet PDF : 6 Pages
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20
TJ = 25°C
15
10
20 V 17.5 V
15 V
12.5 V
5
VGE = 10 V
0
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
20
TJ = 125°C
15
10
5
MGP7N60E
20 V
17.5 V 15 V
12.5 V
VGE = 10 V
0
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 2. Output Characteristics
12
10
VCE = 100 V
5 mS PULSE WIDTH
8
6
TJ = 125°C
4
25°C
2
0
56
7
8
9 10 11 12 13
VGE, GATE-TO-EMITTER VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
2.2
IC = 5.0 A
2.0
3.75 A
1.8
1.6
2.5 A
1.4
1.2
VGE = 15 V
80 mS PULSE WIDTH
1.0
-50 -25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. VCE versus Junction Temperature
1200
1000
800
600
400
200
0
0
VGE = 0 V
TJ = 25°C
Cies
Coes
Cres
5
10
15
20
25
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
20
16
QT
12
Q1
Q2
8
4
TJ = 25°C
IC = 5.0 A
0
0
5
10
15
20
25
30
35
Qg, TOTAL GATE CHARGE (nC)
Figure 6. VGE versus Total Charge
Motorola IGBT Device Data
3
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