MJD350 データシートの表示（PDF） - Fairchild Semiconductor

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MJD350

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

1000

100

VCE = -10V

10

1

-1

-10

-100

-1000

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

-1000

ICP(max)

IC(max)

-100

-10

-1

-10

-100

-1000

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 3. Safe Operating Area

-10

IC = 10 IB

-1

VBE(sat)

-0.1

VCE(sat)

-0.01

-1

-10

-100

IC[A], COLLECTOR CURRENT

-1000

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

24

21

18

15

12

9

6

3

0

0

25

50

75

100

125

150

175

TC[oC], CASE TEMPERATURE

Figure 4. Power Derating

©2001 Fairchild Semiconductor Corporation

Rev. A2, June 2001

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