MJD350 データシートの表示（PDF） - Inchange Semiconductor

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MJD350

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

MJD350

DESCRIPTION

·Collector–Emitter Sustaining Voltage-

: VCEO(SUS) = -300 V(Min)

·DC Current Gain-

: hFE = -30(Min) @ IC= -50mA

·Low Collector Saturation Voltage-

: VCE(sat) = -1.0V(Max.)@ IC= -50mA

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Designed for high voltage and general purpose applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-300

V

VCEO

Collector-Emitter Voltage

-300

V

VEBO

Emitter-Base Voltage

-3

V

IC

Collector Current-Continuous

PC

Collector Power Dissipation

TC=25℃

Ti

Junction Temperature

-0.5

A

20

W

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 6.25 ℃/W

isc website： www.iscsemi.com

isc & iscsemi is registered trademark

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