MJD350 データシートの表示（PDF） - Inchange Semiconductor

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MJD350

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

MJD350

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -1.0mA; IB= 0

V(BR)CBO Collector-Base Breakdown Voltage IC= -1.0mA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -1.0mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA

ICBO

Collector Cutoff Current

VCB= -300V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -3V; IC= 0

hFE

DC Current Gain

IC= -50m A ; VCE= -10V

MIN MAX UNIT

-300

V

-300

V

-3

V

-1.0

V

-0.1

mA

-0.1

mA

30

240

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