MJ16014 データシートの表示（PDF） - New Jersey Semiconductor
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MJ16014 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
MJ16014
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage lc=100mA; IB=0
450
VcE(sat)-1 Collector-Emitter Saturation Voltage IC=10A; IB=1-3A
VcE(sat)-2
VsE(sat)
ICEV
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
lc=15A; IB=2A
IC=15A;IB=2A,TC=100-C
IC=15A;IB=2A
IC=15A;IB=2A,TC=100'C
VcEv=850V;VBE(off)=1.5V
VCEv=850V;VBE(off)=1 .5V;TC=1OO'C
ICER
Collector Cutoff Current
VCE= 850V; RBE= 50 Q ,TC= 100'C
V
2.5
V
3.0
3.0
V
1.5
1.5
V
0.25
1.5
mA
2.5 mA
IEBO
Emitter Cutoff Current
VEB= 6V; lc=0
1.0 mA
hFE
DC Current Gain
lc= 20A ; VCe= 5V
5
COB
Output Capacitance
lE=0;VcB=10V;ftest=1.0kHz
500 PF
Switching times;Resistive Load
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
lc= 15A,Vcc= 250V, RB2= 1.6 Q
Duty Cycle =S2.0%
20
50
ns
200 500 ns
1200 2700 ns
200 350 ns
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