MJD45H11 データシートの表示（PDF） - Inchange Semiconductor

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MJD45H11

Silicon PNP Power Transistors

Inchange Semiconductor 

isc Silicon PNP Power Transistors

INCHANGE Semiconductor

MJD45H11

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0

-80

V

VCE(sat) Collector-EmitterSaturation Voltage

IC= -8A ;IB= -0.4 A

-1.0 V

VBE(sat) Base-Emitter Saturation Voltage

ICES

Collector Cutoff Current

IC= -8A ;IB= -0.8 A

VCE=Rated VCEO; VBE= 0

-1.5 V

-1.0 μA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-1.0 μA

hFE-1

DC Current Gain

IC= -2A ; VCE= -1V

60

hFE-2

DC Current Gain

IC= -4A ; VCE= -1V

40

COB

Output Capacitance

VCB= -10V,f= 1.0MHz

130

pF

fT

Current-Gain—Bandwidth Product

IC=-0.5A;VCE=-10V;ftest=20MHz

40

MHz

Switching Times; Resistive Load

td+tr

Delay and Rise Time

ts

Storage Time

tf

Fall Time

IC= -5A;

IB1= IB2= -0.5A

135

ns

500

ns

100

ns

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