2SA1941 データシートの表示（PDF） - JILIN SINO-MICROELECTRONICS CO., LTD.

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2SA1941

Silicon PNP Epitaxial Transistor

JILIN SINO-MICROELECTRONICS CO., LTD. 

R

2SA1941

ELECTRICAL CHARACTERISTICS (curves)

IC-VCE

hFE – IC

Common emitter Tc = 25°C

Single pulse test

Tc=100

Tc=25

Collector-emitter voltage VCE (V)

VCE(sat)- IC

Common emitter

VCE = -5 V Single pulse test

Collector corrent IC (A)

VBE(sat)- IC

Tc=100

Tc=25

Common emitter

IC/IB = 10

Single pulse test

Collector corrent IC (A)

PC-TC

Tc=25

Tc=100

Common emitter

IC/IB = 10

Single pulse test

Collector corrent IC (A)

SOA

Infinite heat sink

Ambient temperature TC

201311C

TC=25 DC Operation

1ms

Single nonrepetitive pulse Tc = 25°C

Curves must be derated linear

with increase in temperature.

10ms

100ms

Collector-emitter voltage VCE (V)

3/5

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