MMBTA42G(2009) データシートの表示（PDF） - Unisonic Technologies
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MMBTA42G Datasheet PDF : 4 Pages
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MMBTA42
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
6
V
Collector Dissipation (Ta=25°C)
PC
350
mW
Collector Current
IC
500
mA
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Current Gain Bandwidth Product
Collector Base Capacitance
SYMBOL
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
ICBO
IEBO
hFE
fT
Ccb
TEST CONDITIONS
IC=100μA, IE=0
IC =1mA, IB=0
IE=100μA, IC =0
IC =20mA, IB=2mA
IC =20mA, IB=2mA
VCB=200V, IE=0
VBE=6V, IC =0
VCE=10V, IC =1mA
VCE=10V, IC =10mA
VCE=10V, IC =30mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, IE=0, f=1MHz
MIN TYP MAX UNIT
300
V
300
V
6
V
0.2
V
0.90 V
100 nA
100 nA
80
80
300
80
50
MHz
3
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-004,E
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