NDT455N データシートの表示（PDF） - Fairchild Semiconductor
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NDT455N Datasheet PDF : 10 Pages
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Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
VDS = 24 V, VGS = 0 V
IGSSF
Gate - Body Leakage, Forward
IGSSR
Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
VDS = VGS, ID = 250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 11.5 A
ID(on)
On-State Drain Current
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VGS = 4.5 V, ID = 10 A
VGS = 10 V , VDS = 5 V
VGS = 4.5 V, VDS = 5 V
VGS = 10 V, ID = 11.5 A
VDS = 15, VGS = 0 V,
f = 1.0 MHz
VDD = 15 V, ID = 1 A,
VGEN = 10 V, RGEN = 6 Ω
VDS = 10 V,
ID = 11.5 A, VGS = 10 V
Min Typ Max Units
30
TJ = 55°C
V
1
µA
10
µA
100
nA
-100 nA
1
1.5
3
V
TJ = 125°C 0.7 0.9
2.2
0.013 0.015 Ω
TJ = 125°C
0.019 0.03
0.018 0.02
30
A
15
26
S
1220
pF
715
pF
280
pF
11
20
ns
16
30
ns
48
80
ns
40
70
ns
43
61
nC
4
nC
11
nC
NDT455N Rev.F
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