MMSF10N02ZR2 データシートの表示（PDF） - ON Semiconductor
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MMSF10N02ZR2 Datasheet PDF : 10 Pages
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MMSF10N02Z
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0)
(Note 3)
V(BR)DSS
20
−
−
17
Vdc
−
−
mV/°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(Cpk ≥ 2.0)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Note 3)
IDSS
IGSS
VGS(th)
μAdc
−
−
10
−
−
100
−
0.6
1.5
μAdc
Vdc
0.5
0.72
1.1
−
2.86
−
mV/°C
Static Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 10 Adc)
(VGS = 2.7 Vdc, ID = 5.0 Adc)
(Cpk ≥ 2.0)
(Note 3)
Forward Transconductance (VDS = 9.0 Vdc, ID = 5.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 10 Vdc, ID = 5.0 Adc,
VGS = 4.0 Vdc, RG = 10 Ω)
Fall Time
Gate Charge
(VDS = 16 Vdc, ID = 10 Adc,
VGS = 4.0 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 10 Adc, VGS = 0 Vdc)
(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
mΩ
−
13
15
−
16
19
11
14
−
Mhos
−
1150
1225
pF
−
775
810
−
375
480
−
65
75
ns
−
360
440
−
325
640
−
575
860
−
26
32
nC
−
2.5
−
−
13
−
−
9.0
−
Vdc
−
0.83
1.2
−
0.68
−
Reverse Recovery Time
trr
(IS = 10 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
ta
tb
Reverse Recovery Storage Charge
QRR
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
Max limit − Typ
Cpk =
3 x SIGMA
−
765
−
ns
−
240
−
−
530
−
−
8.7
−
μC
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