MMSF2P02ER2 データシートの表示（PDF） - ON Semiconductor

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MMSF2P02ER2

Power MOSFET 2 Amps, 20 Volts

ON Semiconductor 

MMSF2P02E

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 3.)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 μAdc)

Temperature Coefficient (Positive)

V(BR)DSS

20

−

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS (Note 4.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 μAdc)

Threshold Temperature Coefficient (Negative)

IDSS

−

−

IGSS

−

VGS(th)

1.0

Static Drain−to−Source On−Resistance

(VGS = 10 Vdc, ID = 2.0 Adc)

(VGS = 4.5 Vdc, ID = 1.0 Adc)

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

RDS(on)

−

−

gFS

1.0

Ciss

−

Coss

−

Crss

−

SWITCHING CHARACTERISTICS (Note 5.)

Turn−On Delay Time

Rise Time

Turn−Off Delay Time

Fall Time

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 5.0 Vdc,

RG = 6.0 Ω)

Turn−On Delay Time

Rise Time

Turn−Off Delay Time

Fall Time

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

Gate Charge

(VDS = 16 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

td(on)

−

tr

−

td(off)

−

tf

−

td(on)

−

tr

−

td(off)

−

tf

−

QT

−

Q1

−

Q2

−

Q3

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (Note 4.)

(IS = 2.0 Adc, VGS = 0 Vdc)

VSD

−

Reverse Recovery Time

trr

−

(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/μs)

ta

−

tb

−

Reverse Recovery Stored Charge

QRR

−

3. Negative sign for P−Channel device omitted for clarity.

4. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

5. Switching characteristics are independent of operating junction temperature.

Typ

−

24.7

−

−

−

2.0

4.7

0.19

0.3

2.8

340

220

75

20

40

53

41

13

29

30

28

10

1.1

3.3

2.5

1.5

34

18

16

0.035

Max

Unit

Vdc

−

−

mV/°C

μAdc

1.0

10

100

nAdc

Vdc

3.0

−

mV/°C

Ohm

0.25

0.4

−

Mhos

475

pF

300

150

40

ns

80

106

82

26

ns

58

60

56

15

nC

−

−

−

2.0

Vdc

64

ns

−

−

−

μC

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