NDT014L データシートの表示（PDF） - Fairchild Semiconductor

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NDT014L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Typical Electrical Characteristics

1.12

I D = 250µA

1.08

1.04

1

0.96

0.92

-50

-25

0

25

50

75

100

125

150

TJ , JUNCTION TEMPERATURE (°C)

Figure 7. Breakdown Voltage Variation with

Temperature.

10

VGS = 0V

1

0.1

0.01

0.001

TJ = 125°C

25°C

-55°C

0.0001

0.2

0.4

0.6

0.8

1

1.2

VSD , BODY DIODE FORWARD VOLTAGE (V)

Figure 8. Body Diode Forward Voltage Variation

with Current and Temperature.

700

500

Ciss

200

Coss

100

50

f = 1 MHz

20

VGS = 0V

Crss

10

0.1 0.2

0.5

1

2

5

10 20

V DS, DRAIN TO SOURCE VOLTAGE (V)

40 60

Figure 9. Capacitance Characteristics.

10

I D = 2.8A

8

V DS = 5V

10V

20V

6

4

2

0

0

2

4

6

8

10

Q , GATE CHARGE (nC)

g

Figure 10. Gate Charge Characteristics.

VIN

VG S

RGEN

G

VDD

RL

D

V OUT

DUT

S

Figure 11. Switching Test Circuit.

t d(on)

t on

tr

90%

td(off)

toff

tf

90%

VO U T

VIN

10%

10%

50%

10%

90%

INVERTED

50%

PULSE WIDTH

Figure 12. Switching Waveforms.

NDT014L Rev.D

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