NDS352AP データシートの表示（PDF） - TY Semiconductor
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NDS352AP Datasheet PDF : 3 Pages
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SMD Type
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = -250 µA
VDS = -24 V, VGS = 0 V
IGSSF
Gate - Body Leakage, Forward
IGSSR
Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
VDS = VGS, ID = -250 µA
VGS = -4.5 V, ID = -0.9 A
ID(ON)
On-State Drain Current
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
td(on)
Turn - On Delay Time
tr
Turn - On Rise Time
td(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
td(on)
Turn - On Delay Time
tr
Turn - On Rise Time
td(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VGS = -10 V, ID = -1 A
VGS = -4.5 V, VDS = -5 V
VDS = -5 V, ID = -0.9 A
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
VDD = -6 V, ID = -1 A,
VGS = -4.5 V, RGEN = 6 Ω
VDD = -10 V, ID = -1 A,
VGS = -10 V, RGEN = 50 Ω
VDS = -10 V, ID = -0.9 A,
VGS = -4.5 V
Product specification
NDS352AP
Min Typ Max Units
-30
TJ =125°C
V
-1
µA
-10
µA
100 nA
-100 nA
-0.8 -1.7 -2.5
V
TJ =125°C -0.5 -1.4 -2.2
0.45 0.5
Ω
TJ =125°C
0.65 0.7
0.25 0.3
-2
A
1.9
S
135
pF
88
pF
40
pF
5
10
ns
17
30
ns
35
70
ns
30
60
ns
8
15
ns
16 30 ns
35 90 ns
30 90 ns
2
3
nC
0.5
nC
1
nC
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