2SD2150 データシートの表示（PDF） - KEXIN Industrial

部品番号

コンポーネント説明

メーカー

2SD2150

NPN Transistors

KEXIN Industrial 

SMD Type

NPN Transistors

2SD2150

Transistors

■ Features

● Excellent current-to-gain characteristics

● Low collector saturation voltage VCE(sat)

● Complementary to 2SB1412

1.70 0.1

0.42 0.1

0.46 0.1

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Symbol

Rating

Unit

VCBO

40

VCEO

20

V

VEBO

6

IC

3

A

PC

500

mW

TJ

150

℃

Tstg

-55 to 150

1.Base

2.Collector

3.Emitter

■ Electrical Characteristics Ta = 25℃

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

Collector output capacitance

Transition frequency

Symbol

Test Conditions

VCBO Ic= 100u A， IE= 0

VCEO Ic= 1 mA， IB= 0

VEBO IE= 100u A， IC= 0

ICBO VCB= 35 V , IE= 0

IEBO VEB= 5V , IC=0

VCE(sat) IC=2 A, IB=100mA

VBE(sat) IC=2 A, IB=100mA

hFE VCE= 2V, IC= 100mA

Cob VCB=10V, IE=0, f=1MHz

fT VCE=2V,IC=500mA,f=100MHz

■ Classification of hfe

Type

Range

Marking

2SD2150-R

180-390

CF R*

2SD2150-S

270-560

CF S*

Min Typ Max Unit

40

20

V

6

0.1

uA

0.1

0.5

V

1.2

180

560

25

pF

290

MHz

www.kexin.com.cn 1

Share Link: