2SD2150-R-TP-HF データシートの表示（PDF） - Micro Commercial Components
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2SD2150-R-TP-HF Datasheet PDF : 3 Pages
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MCC
R
Micro Commercial Components
Features
omponents
20736 Marilla Street Chatsworth
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• Halogen free available upon request by adding suffix "-HF"
• Excellent current-to-gain characteristics
• Low collector saturation voltage VCE(sat)
• Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PC
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector dissipation
Junction Temperature
Storage Temperature
Rating
Unit
20
V
40
V
6.0
V
3.0
A
500
mW
-55 to +150
OC
-55 to +150
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Min Typ Max Units
V(BR)CBO Collector-Base Breakdown Voltage
40 --- --- Vdc
(IC=50µAdc, IE=0)
V(BR)CEO Collector-Emitter Breakdown Voltage 20
---
---
Vdc
(IC=1.0mAdc,IB=0)
V(BR)EBO Collector-Emitter Breakdown Voltage 6.0 ---
---
Vdc
(IE=50µAdc, IC=0)
ICBO
Collector Cutoff Current
--- --- 0.1 µAdc
(VCB=30Vdc,IE=0)
IEBO
Emitter Cutoff Current
--- --- 0.1 µAdc
(VEB=5.0Vdc, IC=0)
ON CHARACTERISTICS
hFE
DC Current Gain
(IC=100mAdc,V CE=2.0Vdc)
180 --- 560 ---
V CE(sat)
fT
Cob
Collector-Emitter Saturation Voltage
(IC=2.0Adc, IB=0.1Adc)
Gain-Bandwidth product
(VCE=2V, IC=500mA, f=100MHz )
Out Capacitance
(VCB=10V, f=1.0MHz,IE=0)
0.5 Vdc
--- 290 --- MHz
--- 25 ---
pF
hFE CLASSIFICATION
Rank
Range
Marking
R
180-390
CFR
S
270-560
CFS
2SD2150-R
2SD2150-S
NPN
Plastic-Encapsulate
Transistors
SOT-89
A
B
K
E
C
D
G
H
J
F
1
2
3
1. Base
2. Collector
3. Emitter
.061
1.55
25
REF.
Revision: A
www.mccsemi.com
1 of 3
2017 /01/14
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