2SD2150 データシートの表示（PDF） - Galaxy Semi-Conductor
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2SD2150 Datasheet PDF : 4 Pages
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Production specification
LOW FREQUENCY TRANSISTER（20V，3A）
FEATURES
z Low VCE(sat) :VCE(sat) =0.2V(Typ.)
(IC/IB=2A/0.1A).
z Excellent current gain characteristics.
z Complements the 2SB1424.
Pb
Lead-free
2SD2150
Structure
Epitaxial planar type NPN silicon transistor.
ORDERING INFORMATION
Type No.
Marking
2SD2150
CFR
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
VCEO
VEBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector power dissipation
Tj
Junction Temperature
Tstg
Storage Temperature
*1 Single pulse Pw=10ms
40
20
6
3
5
0.5
150
-55 to +150
Unit
V
V
V
A(DC)
A(Pulse)*1
W
℃
℃
E031
Rev.A
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