2SD2150 データシートの表示（PDF） - Foshan Blue Rocket Electronics Co.,Ltd.

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2SD2150

Silicon NPN transistor in a SOT-89 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SD2150

Rev.E Mar.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current-Continuous

Collector Base-Continuous(Pulse)*

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

*:Single pulse PW=10ms

符号

Symbol

VCBO

VCEO

VEBO

IC(DC)

IC(Pulse)*

PC

Tj

Tstg

数值

Rating

40

20

6.0

3.0

5.0

500

150

-55～150

单位

Unit

V

V

V

A

A

mW

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCBO IC=50μA

VCEO IC=1.0mA

Emitter to Base Breakdown Voltage VEBO IE=50μA

Collector Cut-Off Current

ICBO VCB=30V

Emitter Base Cut-Off Current

IEBO VEB=5.0V

DC Current Gain

Collector to Emitter Saturation

Voltage

Transition Frequency

Collector Output Capacitance

hFE VCE=2.0V

VCE(sat)

fT

Cob

IC=2.0A

VCE=2.0V

f=100MHz

VCB=10V

f=1.0MHz

IC=100mA

IB=100mA

IC=0.5A

IE=0

最小值 典型值 最大值 单位

Min Typ Max Unit

40

V

20

V

6.0

V

0.1 μA

0.1 μA

180

560

0.2 0.5 V

290

MHz

25

pF

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