2SD2150 データシートの表示（PDF） - TY Semiconductor

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2SD2150

Low Frequency Transistor

TY Semiconductor 

SMD Type

TransistIoCrs

Product specification

2SD2150

Features

Low VCE(sat).

Excellent DC current gain characteristics.

NPN silicon transistor.

SOT-89

4.50+0.1

-0.1

1.80+0.1

-0.1

12

0.48+0.1

-0.1

3

0.53+0.1

-0.1

Unit: mm

1.50+0.1

-0.1

0.44+0.1

-0.1

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

3.00+0.1

-0.1

Symbol

Rating

Unit

VCBO

40

V

VCEO

20

V

VEBO

6

V

IC

3

A

PC

0.5

W

Tj

150

Tstg

-55 to +150

1. Base

2. Collector

3. Emiitter

Electrical Characteristics Ta = 25

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Output capacitance

Transition frequency

Symbol

Testconditons

BVCBO IC=50ìA

BVCEO IC=1mA

BVEBO IE=50ìA

ICBO VCB=30V

IEBO VEB=5V

VCE(sat) IC=2A, IB=0.1A

hFE VCE=2V, IC=0.1A

fT VCE=2V, IE= -0.5A, f=100MHz

Cob VCB=10V, IE=0A, f=1MHz

Min Typ Max Unit

40

V

20

V

6

V

0.1 ìA

0.1 ìA

0.2 0.5 V

180

560

290

MHz

25

pF

hFE Classification

Marking

Rank

hFE

CF

R

S

180 390

270 560

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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