NTD4808NT4G(2012) データシートの表示（PDF） - ON Semiconductor
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NTD4808NT4G Datasheet PDF : 8 Pages
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NTD4808N, NVD4808N
Power MOSFET
30 V, 63 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free Devices
Applications
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Note 1)
VDSS
30
V
VGS
±20
V
TA = 25°C
ID
13.8
A
TA = 85°C
10.7
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
Continuous Drain
TA = 25°C
ID
Current RqJA
(Note 2)
Steady TA = 85°C
Power Dissipation
State
TA = 25°C
PD
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
TC = 85°C
2.63
W
10
A
7.8
1.4
W
63
A
49
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
Pulsed Drain
Current
tp=10ms TA = 25°C
IDM
54.6
W
126
A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
IL = 17 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDmaxPkg
TJ,
TSTG
IS
dV/dt
EAS
TL
45
−55 to
+175
45
6
144.5
260
A
°C
A
V/ns
mJ
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
8.0 mW @ 10 V
12.4 mW @ 4.5 V
D
ID MAX
63 A
G
S
N−CHANNEL MOSFET
4
4
12
3
DPAK
CASE 369AA
STYLE 2
1
2
3
IPAK
CASE 369D
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
Y
= Year
WW = Work Week
4808N = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
May, 2012 − Rev. 7
Publication Order Number:
NTD4808N/D
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