NTD4808N-1G(2012) データシートの表示（PDF） - ON Semiconductor

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NTD4808N-1G
(Rev.:2012)

Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK

ON Semiconductor 

NTD4808N, NVD4808N

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

td(ON)

Rise Time

tr

Turn−Off Delay Time

td(OFF)

Fall Time

tf

DRAIN−SOURCE DIODE CHARACTERISTICS

VGS = 11.5 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

7.7

19.5

ns

23

3.5

Forward Diode Voltage

Reverse Recovery Time

Charge Time

Discharge Time

Reverse Recovery Charge

PACKAGE PARASITIC VALUES

VSD

tRR

ta

tb

QRR

VGS = 0 V,

IS = 30 A

TJ = 25°C

TJ = 125°C

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 30 A

0.93

1.2

V

0.83

20

10.4

ns

9.6

9.7

nC

Source Inductance

LS

Drain Inductance, DPAK

LD

Drain Inductance, IPAK

LD

TA = 25°C

Gate Inductance

LG

Gate Resistance

RG

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

2.49

nH

0.0164

1.88

3.46

1.1

W

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