PBSS4140T データシートの表示（PDF） - Semtech Electronics LTD.
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PBSS4140T Datasheet PDF : 2 Pages
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PBSS4140T
30 V Low VCE(sat) NPN Transistor
FEATURES
․Low collector-emitter saturation voltage
․High current capabilities
․Improved device reliability due to reduced heat generation.
APPLICATIONS
․General purpose switching and muting
․LCD backlighting
․Supply line switching circuits
․Battery driven equipment (mobile phones,
video cameras and hand-held devices).
Absolute Maximum Ratings (Ta = 25 OC)
Symbol
Value
Unit
Collector Base Voltage
VCBO
40
V
Collector Emitter Voltage
VCEO
30
V
Emitter Base Voltage
Collector Current (DC)
Peak Collector Current
VEBO
5
V
IC
1
A
ICM
2
A
Peak Base Current
Total Power Dissipation
Tamb≦25OC 1)
Tamb≦25 OC 2)
IBM
1
A
200
Ptot
mW
450
Junction Temperature
Tj
150
OC
Storage Temperature Range
TS
-65 to +150
OC
Thermal Resistance From Junction In free air 1)
417
to Ambient
In free air 2)
Rth j-a
278
K/W
Operating Ambient Temperature
Tamb
-65 to +150
OC
1) Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2) Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1cm2.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
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