PHD95N03LT データシートの表示（PDF） - Philips Electronics

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PHD95N03LT

N-channel enhancement mode field-effect transistor

Philips Electronics 

Philips Semiconductors

PHD95N03LT

N-channel enhancement mode field-effect transistor

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter

Rth(j-mb) thermal resistance from junction to mounting

base

Rth(j-a) thermal resistance from junction to ambient

Conditions

Figure 4

mounted on a printed circuit board;

minimum footprint

7.1 Transient thermal impedance

Value Unit

1.3 K/W

50 K/W

10

Zth(j-mb)

(K/W)

1

δ = 0.5

0.2

10-1 0.1

0.05

0.02

10-2

single pulse

10-3

10-5

10

03ae85

P

δ

=

tp

T

10-3

10-2

10-1

tp

t

T

1

10

tp (s)

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.

9397 750 08216

Product data

Rev. 01 — 18 July 2001

© Philips Electronics N.V. 2001. All rights reserved.

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