PHD95N03LT データシートの表示（PDF） - Philips Electronics
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PHD95N03LT Datasheet PDF : 13 Pages
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Philips Semiconductors
PHD95N03LT
N-channel enhancement mode field-effect transistor
75
ID
10 V 5 V
(A)
60
3.5 V
03ad78
Tj = 25 ºC
75
ID VDS > ID x RDSon
(A)
60
03ad80
45
45
3V
30
30
15
0
0
VGS = 2.5 V
0.4
0.8
1.2
1.6
2
VDS (V)
15
0
0
175 ºC
Tj = 25 ºC
1
2
3
4
VGS (V)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C and 175 °C; VDS ≥ ID x RDSON
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0.06
RDSon
(Ω)
0.05
2.5 V
0.04
0.03
0.02
0.01
0
0
15
VGS = 3 V
30
45
03ad79
Tj = 25 ºC
3.5 V
5V
10 V
60 ID (A) 75
03ad57
2
a
1.6
1.2
0.8
0.4
0
-60
0
60
120 Tj (ºC) 180
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = -------R----D----S--o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 08216
Product data
Rev. 01 — 18 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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