2SB1373 データシートの表示（PDF） - New Jersey Semiconductor
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2SB1373 Datasheet PDF : 2 Pages
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^E.mi-(-ond\j.ckoi LProaucti, One..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1373
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO=-160V(Min)
• Wide Area of Safe Operation
• Complement to Type 2SD2066
APPLICATIONS
• Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
VCBO Collector-Base Voltage
-160
UNIT
V
• ''• '«'••"••' ..A""" "\
J-f
' '? 'I' '
& :f
'•* j * ,
123
3
PIHll Base
2 Collector
3 Enitter
TO-3PH package
B— »• — C ^-
UL-YV.F—;»
stir^, • ; - , -
1
J"E:
I
1
t • 1 H"
c1
*• -•<
G * *-L
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
Ic
Collector Current-Continuous
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25'C
PC
Collector Power Dissipation
@ Ta=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-160
V
-5
V
-12
A
-20
A
120
W
2.5
150
°C
-55-150
•c
-*--^j
_«..*. 0
.». -t-R -«-N-»-
mm
DIM WIN MAX
A 19.60 20.10
B 15.50 15.70
C 4.70 4.90
D 0.90 1.10
E 1.90 2.10
F 3,40 3.60
G 2.90 3.20
H 3.20 3.40
J 0.595 0.605
K 20.00 20.70
L 1.90 2,20
M 10.89 10.91
q 4.90 5.10
R 3,35 3.45
$ 1,995 2.100
P 5,90 6,10
Y 9.90 10.10
NJ SemKoiicUictors reserves the right to change test conditions, parameter limits and package dimensions \vithout
nonce. Information furnished by NJ Semi-Coiuluttors is believed to he holh aceurnre and reliable at the time of foii
10 press. I louever. N.I Semi-Condiiclors assumes no responsibility Tor any errors or omissions discovered in its use
N I Semi-Conduelors eituuiraues euslomers lo \erily thai Jataslieels ;irc eiiriviit be lore placing onlers.
Quality Seini-Conductors
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