Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwisespecified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
lc= -0.1mA; \=0
V(BR)CEO Collector-Emitter Breakdown Voltage lc=-10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
lE=-0.1mA;lc=0
VcE(sat) Collector-Emitter Saturation Voltage IC=-1A;IB=-0.1A
ICBO
Collector Cutoff Current
VCB=-120V; IE=0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hFE
DC Current Cain
lc=-0.1A;VCE=-5V
fy
Current-Gain—Bandwidth Product
lc=-0.1A;VCE=-5V
• hFE Classifications
D
E
F
60-120 100-200 160-320
2SB1353
MIN TYP. MAX UNIT
-120
V
-120
V
-5
V
-2.0 V
-10 M A
-10 M A
60
320
50
MHz