2SB1204 データシートの表示（PDF） - Inchange Semiconductor

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2SB1204

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

2SB1204

DESCRIPTION

·High current and high fT

·Small and slim package making it easy to make 2SB1204-used set smaller

·Low collector-to-emitter saturation voltage

·Excellent linearity of hFE

·Fast switching speed

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·relay drivers,high speed inverters,converters and other

general high-current switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-50

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-8

A

ICP

Collector Current-Pulse

Collector Power Dissipation

@ TC=25℃

PC

Collector Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-12

A

20

W

1.0

W

150

℃

-55~150

℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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