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2SC4940 データシートの表示(PDF) - New Jersey Semiconductor

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2SC4940
NJSEMI
New Jersey Semiconductor NJSEMI
2SC4940 Datasheet PDF : 2 Pages
1 2
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 0.1A;IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= 2A; IB= 0.4A
VeE(sat) Base-Emitter Saturation Voltage
lc= 2A; IB= 0.4A
IcBO
Collector Cutoff Current
At rated Voltage
ICEO
Collector Cutoff Current
At rated Voltage
IEBO
Emitter Cutoff Current
At rated Voltage
hpE-1
DC Current Gain
lc=2A; VCE= 5V .
hFE-2
DC Current Gain
lc=1mA;VCE=5V
ft
Current-Gain—Bandwidth Product lc=0.4A;VCE= 10V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc= 2A; IB1=0.4A; IB2= -0.8A;
RL= 75 Q ; VBB2= 4V
2SC4940
MIN TYP. MAX UNIT
550
V
1.0
V
1.5
V
100
uA
100
uA
100
uA
10
10
10
MHz
0.8
11 S
3.0
us
0.3
us

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