C4941 データシートの表示（PDF） - New Jersey Semiconductor
部品番号
コンポーネント説明
メーカー
C4941 Datasheet PDF : 2 Pages
| |||
Silicon NPN Power Transistors
2SC4941
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 0.2A; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= 3A; IB= 0.6A
VeE(sat) Base-Emitter Saturation Voltage
lc= 3A; IB= 0.6A
ICBO
Collector Cutoff Current
At rated Voltage
ICEO
Collector Cutoff Current
At rated Voltage
IEBO
Emitter Cutoff Current
At rated Voltage
hpE-1
DC Current Gain
lc=1A;VCE=5V •
hFE-2
DC Current Gain
lc= 1mA;VcE=5V
fi
Current-Gain—Bandwidth Product
lc=0.6A; VCE=10V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC=3A, IB1=0.6A; IB2=-1.2A
RL=850;VBB2=4V
MIN TYP. MAX UNIT
800
V
0.5
V
1.5
V
100
uA
100
nA
100
uA
15
7
8
MHz
0.5
us
3.5
us
0.3
us
Share Link: 