Product Specification
Silicon ower Transistors
www.jmnic.com
2SC4941
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS) Collector-emitter sustaining voltage
CONDITIONS
IC=0.2A ;IB=0
VCBO
Collector-base voltage
IC=1mA ;IE=0
VCEsat Collector-emitter saturation voltage IC=3A IB=0.6A
VBEsat Base-emitter saturation voltage
IC=3A IB=0.6A
ICBO
Collector cut-off current
VCB=1200V IE=0
ICEO
Collector cut-off current
VCE=RatedVCEO; IB=0
IEBO
Emitter cut-off current
VEB=RatedVEBO; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=1mA ; VCE=5V
fT
Transition frequency
IC=0.6A ; VCE=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3A
IB1=0.6A; IB2=-1.2A
VBB2=4V
RL=85Ω
MIN
800
1500
15
7
TYP.
MAX
0.5
1.5
100
100
100
UNIT
V
V
V
V
μA
μA
μA
8
MHz
0.5
μs
3.5
μs
0.3
μs
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