C4368 データシートの表示（PDF） - New Jersey Semiconductor

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C4368

Silicon NPN Power Transistor

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

\P-ioducti, Ona.

Silicon NPN Power Transistor

TELEPHONE: (973) 376-2922

(212) 227-6005

FAX: (973) 376-8960

2SC4368

DESCRIPTION

• Collector-Emitter Breakdown Voltage

: VCEo=150V(Min)

• Complement to Type 2SA1657

APPLICATIONS

• Designed for TV, monitor vertical output applications

ABSOLUTE MAXIMUM RATINGS(Ta=25°C)

SYMBOL

PARAMETER

VALUE UNIT

VCBO Collector-Base Voltage

150

V

VCEO Collector-Emitter Voltage

150

V

VEBO Emitter-Base Voltage

5.0

V

Ic

Collector Current-Continuous

1.5

A

IB

Base Current-Continuous

Collector Power Dissipation

@TC= 25°C

PC

Collector Power Dissipation

@Ta= 25°C

Tj

Junction Temperature

0.5

A

20

W

2

150

•c

Tstg

Storage Temperature

-55-150 'C

12Z

PIN 1.BASE

2.COLLECTOR

3. EMITTER

TO-220F package

-C

-s-

R-

0

J --

N

mm

DIM MIN

A 14.95

B 10.00

C 4.40

D 0.75

F 3.10

H 3.70

J 0.50

K 13.4

L 1.10

N 5.00

Q 2.70

R 2.20

s 2.65

U 6.40

MAX

15.05

10.10

4.60

0.80

3.30

3.90

0.70

13.6

1.30

5.20

2.90

2.40

2.85

6.60

N.I Semi-Conductors reserves the right lo change test conditions, parameter limits and package dimensionswithout

notice. Information furnished by N.I Semi-Conductors is believed to be hoth accurate and reliable at the time of going

to press. However. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.

N.I Semi-Conductors encourages customers to verily that datasheets are current before placing orders.

Quality Semi-Conductors

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