2SC5890 データシートの表示（PDF） - Inchange Semiconductor

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2SC5890

Silicon NPN RF Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN RF Transistor

isc RF Product Specification

2SC5890

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

V(BR)CBO Collector-Base Breakdown Voltage

ICBO

Collector Cutoff Current

ICEO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

hFE

DC Current Gain

fT

Current-Gain—Bandwidth Product

COB

Output Capacitance

Cre

Reverse Transfer Capacitance

︱S21e︱2 Insertion Power Gain

PG

Power Gain

NF

Noise Figure

CONDITIONS

IC= 10μA ; IE= 0

VCB= 12V; IE= 0

VCE= 9V; RBE= ∞

VEB= 1.5V; IC= 0

IC= 20mA ; VCE= 5V

IC= 30mA ; VCE= 5V ;f= 1 GHz

IE= 0 ; VCB= 5V;f= 1.0MHz

IE= 0 ; VCB= 5V;f= 1.0MHz

IC= 30mA ; VCE= 5V;f= 1GHz

IC= 30mA ; VCC= 5V;f= 900MHz

IC= 5mA ; VCC= 5V;f= 900MHz

MIN TYP. MAX UNIT

20

V

1

μA

1

mA

10 μA

100

200

5.5 7.8

GHz

0.9 1.5 pF

0.85

pF

11

dB

9.5 12

dB

1.0 1.9 dB

isc website：www.iscsemi.cn

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