2SC3144 データシートの表示（PDF） - New Jersey Semiconductor

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2SC3144

Silicon NPN Darlington Power Transistor

New Jersey Semiconductor 

, fine.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon NPN Darlington Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX; (973) 376-8960

2SC3144

DESCRIPTION

• Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 60V(Min)

• High DC Current Gain

: hFE=2000(Min)@lc=1.5A

• Wide Area of Safe Operation

• Complement to Type 2SA1258

APPLICATIONS

• Designed for high-speed drivers applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

70

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

5

V

Ic

Collector Current-Continuous

3

A

ICP

Collector Current-Peak

Collector Power Dissipation

@ Ta=25"C

PC

Collector Power Dissipation

@ TC=25'C

Tj

Junction Temperature

5

A

1.75

W

20

125

"C

Tstg

Storage Temperature Range

-55-125

"C

H

a. J1

2

T-fr ~"'"1 ^Is

PIN LEASE

2. COLLECTOR

S.ByllTTER

TQ-220C package

- B -H

-* V * L F

*yy * » i

Uk

f

A

.» *s

>

— -500-

F

oj-r r » H T ^1.0,.00•-

11

K

r ,***• 0

T

1

r H Gh

cT! ^

{

1

A

1

}

+ \+ J

•If^r

mm

DilY WIN MAX

A 15.70 15.90

B 9.90 10.10

r 4.20 4.40

D 0.70 0.90

F 3.40 3.60

G 4.98 5.18

H 2.70 2.90

j 0.44 0.46

K 13.20 13.40

L 1.10 1.30

Q 2.70 2.90

R 2.50 2.70

S 1.29 1.31

U M5 6.65

U 8.66 8.86

N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. In formation (iimi.shed by N.I Semi-Conductors is believed to he both accurnte and reliable at llie time of going

hi press. I low ever, N.I Semi-Conductors assumes no responsibility lor any errors or omissions discovered in its use.

N I Scini-( iMulticlnrs eiiaiiifayes ci^lomers to verily that datasheets are current before placing orders.

Quality -Semi-Conductors

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