2SC3144 データシートの表示（PDF） - New Jersey Semiconductor
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2SC3144 Datasheet PDF : 2 Pages
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Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage lc= 5mA;IE= 0
VcEO(SUS) Collector-Emitter Sustaining Voltage • lc= 50mA; RBE- =°
VcE(sat) Collector-Emitter Saturation Voltage lc=1.5A; lB=3mA
VBE(sat) Base-Emitter Saturation Voltage
lc= 1.5A; !B=3mA
ICBO
Collector Cutoff Current
VCB= 40V; le=0
IEBO
Emitter Cutoff Current
VEB= 5V; lc=0
hFE
DC Current Gain
lc=1.5A; VCE=2V
fr
Current-Gain—Bandwidth Product lc=-1.5A;VCE=5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc= 1A, lBi=-lB2=2mA
RL=20a;VCc« 20V
2SC3144
MIN TYP. MAX UNIT
70
V
60
V
1.5
V
2.0
V
100
uA
3
mA
2000
200
MHz
0.3
us
1.2
MS
0.2
ns
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