2SC4421 データシートの表示（PDF） - New Jersey Semiconductor
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2SC4421 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC4421
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 10mA; IB= 0
400
V
VcE(sat) Collector-Emitter Saturation Voltage lc= 1.5A; IB=0.3A
VBE(sat) Base-Emitter Saturation Voltage
lc=1.5A; IB=0.3A
1.5
V
1.5
V
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
100 u A
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
100 tiA
hpE-1
DC Current Gain
lc= 0.1 A; VCE= 5V
10
hFE-2
DC Current Gain
lc=1.5A; Vce=5V
6
fi
Current-Gain—Bandwidth Product
lc=0.2A;VCE=10V;f=1MHz
5
MHz
Switching Times
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
lc=1.5A;lBi=0.3A;lB2=-0.6A;
Vcc= 1 50V
0.5 u s
2.0 u s
0.1 u s
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