2SC4596 データシートの表示（PDF） - New Jersey Semiconductor
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2SC4596 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC4596
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage IC=3A;IB=0.3A, L= 1mH
V(BR)CBO Collector-Base Breakdown Voltage
lc=50uA; IE=0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50 u A; lc= 0
VcE(sat)-1 Collector-Emitter Saturation Voltage IC=3A;IB=0.15A
VcE(sat)-2 Collector-Emitter Saturation Voltage lc= 4A; IB= 0.2A
VBE(sat)-i Base-Emitter Saturation Voltage
IC=3A;IB=0.15A
VBE(sat)-2 Base-Emitter Saturation Voltage
|c= 4A; IB= 0.2A
Icso
Collector Cutoff Current
VCB= 1 00V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
hFE
DC Current Gain
lc=1A; VCE=2V
fr
Current-Gain—Bandwidth Product
lc=0.5A;VCE=10V
COB
Output Capacitance
lE=0;VcB=10V;ftest= LOMHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC=3A;IB1=-IB2=0.15A
RL=100;VCc« 30V
MIN TYP. MAX UNIT
60
V
100
V
5
V
0.3
V
0.5
V
1.2
V
1.5
V
10
uA
10
uA
100
320
120
MHz
80
PF
0.3
PS
1.5 u s
0.3 u s
• hFE classifications
E
F
100-200 160-320
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