2SC4428 データシートの表示（PDF） - New Jersey Semiconductor
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2SC4428 Datasheet PDF : 2 Pages
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Silicon NPN PowerTransistor
2SC4428
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 5mA; RBE= °°
800
V
V(BR)CBO Collector-Base Breakdown Voltage
lc=1mA; IE=0
1100
V
V(BR)EBO Emitter-Base Breakdown Voltage
lE=1mA;lc=0
7
V
VcE(sat) Collector-Emitter Saturation Voltage lc= 3A; IB= 0.6A
VsE(sat) Base-Emitter Saturation Voltage
lo= 3A; IB= 0.6A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
2.0
V
1.5
V
10
nA
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
10
uA
hpE-1
DC Current Gain
lc= 0.4A; VCE= 5V
10
40
llFE-2
DC Current Gain
lc= 2A; VCE= 5V
8
COB
Output Capacitance
le=0; VcB=10V;ftest=1.0MHz
fi
Current-Gain—Bandwidth Product
lc=0.4A; VCE=10V
120
pF
15
MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc= 4A; IB1= 0.8A; IB2=-1.6A;
RL= 100Q; VCC=400V
0.5
us
3.0
us
0.3
PS
hpE-1 Classifications
K
L
M
10-20
15-30 20-40
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