2SC3230 データシートの表示（PDF） - New Jersey Semiconductor
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2SC3230 Datasheet PDF : 2 Pages
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^E.mi-Condit.cto'i ^Pr
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Qnc.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC3230
-v ,
2
DESCRIPTION
• Collector-Emitter Breakdown Voltage
: V(BR)CEo= 30V(Min)
• Good Linearity of hFE
• Complement to Type 2SA1276
*
.;,
:1
i 2z
PIN 1. BASE
I. C O L L E C T O R
3. EMITTER
TO-220C package
APPLICATIONS
• Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25t:)
SYMBOL
PARAMETER
VALUE
UNIT
VOBO Collector-Base Voltage
30
V
VCEO Collector-Emitter Voltage
30
V
VEBO Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
3
A
. IE
PC
Tj
Emitter Current-Continuous
Total Power Dissipation
@ TC=25'C
Junction Temperature
Tstg
Storage Temperature Range
-3
A
10
W
150
'C
-55-150 °c
•* B H
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Uk
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A
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4H
I}
K
sT L
rs -»
1 i]5 ot1
f
T
11 j 0
i H<
c
i
mm
DIM WIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
j 0.44 0.46
K 13.20 13.40
L 1.10 1.30
Q 2.70 2.90
R 2.50 2.70
S 1.29 1 31
U 6.45 6.65
V 8.66 8.86
N.I Senii-Conduetors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished hy N.I Semi-Conductors is helieved to he both accurate and reliable at the time ol>in»
to press. llo\\e\er. N.I Seini-CtinducUirs assumes no responsibilil> for an> errors or omissions discovered in its n>e."
N.I Senn-C'undiicloiA ciiciuira.»es cuslomcrs to \crily thai datiishocts ;ire enriviH helbiv placing orders.
Quality 5emi-Conducfors
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