2SC5463 データシートの表示（PDF） - Inchange Semiconductor
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2SC5463 Datasheet PDF : 3 Pages
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5463
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 1V; IC= 0
hFE
DC Current Gain
IC= 15mA ; VCE= 8V
fT
Current-Gain—Bandwidth Product IC= 15mA ; VCE= 8V
COB
Output Capacitance
IE= 0 ; VCB= 8V; f= 1MHz
Cre
Reverse Transfer Capacitance
︱S21e︱2 Insertion Power Gain
︱S21e︱2 Insertion Power Gain
NF
Noise Figure
IE= 0 ; VCB= 8V; f= 1MHz
IC= 15mA ; VCE= 8V; f= 500MHz
IC= 15mA ; VCE= 8V; f= 1GHz
IC= 5mA ; VCE= 8V; f= 500MHz
NF
Noise Figure
IC= 5mA ; VCE= 8V; f= 1GHz
MIN TYP. MAX UNIT
1
μA
1
μA
80
240
5
7
GHz
0.8
pF
0.55
pF
9.5 12.5
dB
8
12
dB
1
dB
1.1
2
dB
hFE Classification
O
Y
80-160 120-240
isc website：www.iscsemi.cn
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