2SC5463 データシートの表示（PDF） - New Jersey Semiconductor
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2SC5463 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
Silicon NPN RF Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC5463
DESCRIPTION
• Low Noise Figure
NF = 1.1 dB TYP. @VCE = 8 V, lc = 5mA, f= 1 GHz
• High Gain
I S21e 1 2 = 12 dB TYP. @VCE = 8 V, lc = 15 mA, f = 1GHz
APPLICATIONS
• Designed for use in VHF~ UHF band low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VcBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
12
V
VEBO Emitter-Base Voltage
3
V
lc
Collector Current-Continuous
Collector Power Dissipation
PC
@TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
60
mA
0.1
W
125
'C
-55-125
r
SOT-323 package
H,h*
III
Marking
t
t 1 l:Base
=c - .
i 1 -: Emitter
U j U _J_ 3: Collector
L_h}
i
i—i '/ 1+ Jr "P w
d— Q-
Mi
mm
DIM
MiN
MAX
A o. so o. ;o
B 1. 15
1. 35
C 2.00
2. :0
I).
''.'. fcc
H
l.SO
2.20
K 0. SO i. 00
\
0. 10
0. 25
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibilityfor any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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