2SC5463 データシートの表示（PDF） - New Jersey Semiconductor
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2SC5463 Datasheet PDF : 2 Pages
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Silicon NPN RF Transistor
2SC5463
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICBO
Collector Cutoff Current
VCB=10V; IE=0
IEBO
Emitter Cutoff Current
VEB= 1V; lc= 0
hFE
DC Current Gain
lc=15mA;VCE=8V
fr
Current-Gain—Bandwidth Product lc= 15mA; VCE=8V
COB
Output Capacitance
IE= 0 ; VCB= 8V; f= 1 MHz
Cre
Reverse Transfer Capacitance
1 S2le I 2 Insertion Power Gain
I S21e I 2 Insertion Power Gain
IE= 0 ; VCB= 8V; f= 1 MHz
lc= 15mA ; VCE= 8V; f= 500MHz
lo=15mA;VcE=8V;f=1GHz
NF
Noise Figure
lc= 5mA ; VCE= 8V; f= 500MHz
NF
Noise Figure
lc=5mA;VCE=8V;f=1GHz
MIN TYP. MAX UNIT
1
uA
1
yA
80
240
5
7
GHz
0.8
PF
0.55
PF
9.5 12.5
dB
8
12
dB
1
dB
1.1
2
dB
Classification
0
Y
80-160 120-240
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