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2SC3934G データシートの表示(PDF) - Panasonic Corporation

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2SC3934G
Panasonic
Panasonic Corporation Panasonic
2SC3934G Datasheet PDF : 5 Pages
1 2 3 4 5
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3934G
Silicon NPN epitaxial planar type
For high-frequency wide-band low-noise amplification
Features
/ High transition frequency fT
S-Mini type package, allowing downsizing of the equipment and
e automatic insertion through the tape packing and the magazine
e. packing
nc d cle stag Absolute Maximum Ratings Ta = 25°C
a e lifecy Parameter
Symbol Rating
Unit
t Collector-base voltage (Emitter open) VCBO
15
V
uc Collector-emitter voltage (Base open) VCEO
12
V
n u rod Emitter-base voltage (Collector open) VEBO
2.5
V
te tin r P Collectorcurrent
IC
30
mA
fou . Peak collector current
ICP
50
mA
ing type tion Collector power dissipation
PC
150
mW
a Junction temperature
Tj
150
°C
in n follow ance pe ped form / Storage temperature
Tstg 55 to +150 °C
Package
Code
SMini3-F2
Marking Symbol: 1U
Pin Name
1. Base
2. Emitter
3. Collector
a o ludes ainten nce tyued type test ino.jp/en Electrical Characteristics Ta = 25°C ± 3°C
c inc d m tena ntin d ty t la ic.c Parameter
Symbol
Conditions
Min Typ Max Unit
ed ne in co ue ou on Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
100 nA
M is tinu pla ma dis tin ab as Emitter-basecutoffcurrent(Collectoropen) IEBO VEB = 2 V, IC = 0
1
µA
iscon laned iscon URL .pan Forward current transfer ratio
hFE VCE = 10 V, IC = 10 mA
40
n Transition frequency
fT
VCE = 10 V, IC = 10 mA, f = 0.8 GHz
4.5
GHz
/D p d ing ico Collector output capacitance
e w m (Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
1.2
pF
Danc follo .se Forward transfer gain
ten isit ww Maximum unilateral power gain
ain e v ://w Noise figure
S21e2 VCE = 10 V, IC = 20 mA, f = 0.8 GHz
9
12
dB
GUM VCE = 10 V, IC = 20 mA, f = 0.8 GHz
12
14
dB
NF VCE = 10 V, IC = 5 mA, f = 0.8 GHz
1.3 2.5
dB
M Pleas http Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2007
SJC00360AED
1

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