2SC5090 データシートの表示（PDF） - Inchange Semiconductor
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2SC5090 Datasheet PDF : 7 Pages
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5090
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 1V; IC= 0
hFE
DC Current Gain
IC= 20mA ; VCE= 8V
︱S21e︱2 Insertion Power Gain
IC= 20mA;VCE= 8V; f= 1GHz
︱S21e︱2 Insertion Power Gain
IC= 20mA;VCE= 8V; f= 2GHz
fT
Current-Gain—Bandwidth Product IC= 20mA ; VCE= 8V
COB
Output Capacitance
IE= 0 ; VCB= 10V;f= 1.0MHz
Cre
Feedback Capacitance
NF
Noise Figure
IE= 0 ; VCB= 10V;f= 1.0MHz
IC= 5mA ; VCE= 8V; f= 1GHz
NF
Noise Figure
IC= 5mA ; VCE= 8V; f= 2GHz
MIN TYP. MAX UNIT
1
μA
1
μA
50
160
10
13
dB
7
7
10
dB
GHz
0.7
pF
0.5 0.95 pF
1.1 2.5 dB
1.7
dB
hFE Classification
R
O
50-100
80-160
isc website：www.iscsemi.cn
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