C4994 データシートの表示（PDF） - Hitachi -> Renesas Electronics
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C4994 Datasheet PDF : 10 Pages
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2SC4994
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
Unit
15
V
8
V
1.5
V
20
mA
100
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
Note: Marking is “YS–”.
Symbol Min
I CBO
—
I CEO
—
I EBO
—
hFE
50
Cob
—
fT
7.5
PG
14.0
NF
—
Typ Max Unit
—
10
µA
—
1
mA
—
10
µA
120 250
0.4 0.75 pF
10.5 —
GHz
17.0 —
dB
1.2 2.5 dB
Test conditions
VCB = 15 V, IE = 0
VCE = 8 V, RBE = ∞
VEB = 1.5 V, IC = 0
VCE = 5 V, IC = 10 mA
VCB = 5 V, IE = 0, f = 1 MHz
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 10 mA,
f = 900 MHz
VCE = 5 V, IC = 5 mA,
f = 900 MHz
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
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