2SC4265 データシートの表示（PDF） - Inchange Semiconductor
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2SC4265 Datasheet PDF : 4 Pages
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4265
DESCRIPTION
·Low Noise
·High Gain
APPLICATIONS
·Designed for use in VHF RF amplifier, local oscillator, mixer.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
30
V
VCEO Collector-Emitter Voltage
20
V
VEBO Emitter-Base Voltage
3.0
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
50
mA
0.1
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn
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