2SC535 データシートの表示（PDF） - Hitachi -> Renesas Electronics
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2SC535 Datasheet PDF : 12 Pages
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2SC535
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown V(BR)CBO 30
voltage
Collector to emitter breakdown V(BR)CEO 20
voltage
Emitter to base breakdown
voltage
V(BR)EBO
4
Collector cutoff current
I CBO
—
DC current transfer ratio
hFE*1
60
Base to emitter voltage
VBE
—
Collector to emitter saturation VCE(sat)
—
voltage
Gain bandwidth product
fT
450
Collector output capacitance Cob
—
Power gain
PG
17
Typ
—
—
—
—
—
0.72
0.17
940
0.9
20
Max
—
—
—
0.5
200
—
—
—
1.2
—
Noise figure
NF
—
3.5
5.5
Input admittance (typ)
yie
1.3 + j5.3
Reverse transfer admittance yre
(typ)
–0.078 – j0.41
Foward transfer admittance yfe
(typ)
32 – j10
Output admittance (typ)
yoe
0.08 + j0.82
Note: 1. The 2SC535 is grouped by hFE as follows.
B
C
60 to 120 100 to 200
Unit
V
V
V
µA
V
V
MHz
pF
dB
dB
mS
mS
mS
mS
Test conditions
IC = 10 µA, IE = 0
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
VCB = 10 V, IE = 0
VCE = 6 V, IC = 1 mA
VCE = 6 V, IC = 1 mA
IC = 20 mA, IB =4 mA
VCE = 6 V, IC = 5 mA
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 6 V, IC = 1 mA,
f = 100 MHz
VCE = 6 V, IC = 1 mA,
f = 100 MHz, Rg = 50 Ω
VCE = 6 V, IC = 1 mA,
f = 100 MHz
3
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