2SC4627 データシートの表示（PDF） - Galaxy Semi-Conductor
部品番号
コンポーネント説明
メーカー
2SC4627 Datasheet PDF : 4 Pages
| |||
Production specification
NPN High-frequency Transistor
2SC4627
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0
30
V
Emitter-base breakdown voltage
V(BR)EBO IE=10μA,IC=0
3
V
DC current gain
hFE
VCB=6V,IE=-1mA
40
260
Base-emitter voltage
VBE
Transition frequency
fT
Common-collector reverse transfer
capacitance
Cre
CLASSIFICATION OF HFE
RANK
B
RANGE
40-110
VCB=6V,IE=-1mA
VCE=12V,
IE=-1mA,f=200MHz
VCB=6V,
IE=-1mA,f=10.7MHz
0.72
450 650
0.8
V
MHz
1 Pf
C
65-160
D
100-260
H034
Rev.A
www.gmicroelec.com
2
Share Link: 