2SC4627J0L データシートの表示（PDF） - Panasonic Corporation
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2SC4627J0L Datasheet PDF : 3 Pages
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Transistors
2SC4627J
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
30
V
Collector-emitter voltage (Base open) VCEO
20
V
Emitter-base voltage (Collector open) VEBO
3
V
Collector current
IC
15
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg −55 to +125 °C
1.60+–00..0035
1.00±0.05
3
12
0.27±0.02
(0.50)(0.50)
5˚
Unit: mm
0.12+–00..0013
Marking Symbol: U
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
30
V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
3
V
Base-emitter voltage
VBE VCB = 6 V, IE = −1 mA
720
mV
Forward current transfer ratio *
hFE VCB = 6 V, IE = −1 mA
65
160
Transition frequency
fT
VCB = 6 V, IE = −1 mA, f = 200 MHz
450 650
MHz
Reverse transfer capacitance
(Common emitter)
Cre VCB = 6 V, IE = −1 mA, f = 10.7 MHz
0.8 1.0
pF
Power gain
Noise figure
GP VCB = 6 V, IE = −1 mA, f = 100 MHz
24
dB
NF VCB = 6 V, IE = −1 mA, f = 100 MHz
3.3
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
C
hFE
65 to 160
Publication date: March 2003
SJC00163AED
1
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