2SC3938G データシートの表示（PDF） - Panasonic Corporation
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2SC3938G Datasheet PDF : 4 Pages
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3938G
Silicon NPN epitaxial planar type
For high-speed switching
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
40
V
Collector-emitter voltage (E-B short) VCES
40
V
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC
100
mA
Peak collector current
ICP
300
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
■ Package
• Code
SMini3-F2
• Marking Symbol: 2Y
• Pin Name
1. Base
2. Emitter
3. Collector
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB = 40 V, IE = 0
Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0
Forward current transfer ratio *
hFE VCE = 1 V, IC = 10 mA
60
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 1 mA
Base-emitter saturation voltage
VBE(sat) IC = 10 mA, IB = 1 mA
Transition frequency
fT
VCB = 10 V, IE = −10 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
0.1
0.1
200
0.17 0.25
1
450
2
6
µA
µA
V
V
MHz
pF
Turn-on time
Turn-off time
Storage time
ton Refer to the measurement circuit
toff
tstg
17
ns
17
ns
10
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE
60 to 120
90 to 200
Publication date: April 2007
SJC00364AED
1
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